nchange semiconductor isc product specification isc website isc & iscsemi is registe red tr a demark 1 isc silicon npn power transistor b ds16 description high voltage: v cev = 120v(min) low saturation voltage - : v ce(sat) = 1.5v(max)@ i c = 4a high reliablity applications designed for power linear and switching application and g eneral puepose power. a bsolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector - b ase v oltage 120 v v ce o collector - e mitter v oltage 120 v v ebo emitter - b ase v oltage 5 v i c collector c urrent - continuous 8 a i b base c urrent 2 a p c collector p ower d issipat i on @ t c =25 50 w t j junction temperature 150 t stg storage temperature range - 65~150 thermal characteristics symbol paramete r max unit r th j - c thermal r esistance , j unction to case 2.5 /w r th j - a thermal r esistance , j unction to ambient 62.5 /w
nchange semiconductor isc product specification isc website isc & iscsemi is registered tr a demark 2 i sc silicon npn power transistor BDS16 electrical characteristics t c =25 v ceo (sus) collector - e mitter sustaining v oltage i c = 50m a ;i b = 0 120 v v c e( sat ) - 1 collector - e mitter s aturation v oltage i c = 4 a; i b = 0.4 a 1.5 v v c e( sat ) - 2 collector - e mitter s aturation v oltage i c = 0.5 a; i b = 0.05 a 0.4 v i c bo collector c utoff c urrent v c e = 120v; v b e = 0 0.02 ma i c eo collector c utoff c urrent v c e = 60v; v b e = 0 0.5 ma i ebo emitter c utoff c urrent v eb = 5 v; i c =0 0.01 ma h fe - 1 dc c urrent g ain i c = 0.5 a; v ce = 2 v 40 250 h fe - 2 dc c urrent g ain i c = 4 a; v ce = 2 v 15 150 f t current - gain bandwidth product i c = 0.5 a ; v ce = 10 v 30 mhz
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